View APT11044JFLL_1211318.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT11044JFLL
1100V 22A 0.440
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT11044JFLL UNIT Volts Amps
1100 22 88 30 40 521 4.17 -55 to 150 300 22 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1100 0.440 250 1000 100 3 5
(VGS = 10V, 11A)
Ohms A nA Volts
11-2003 050-7179 Rev A
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT11044JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 22A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 22A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 733V, VGS = 15V ID = 22A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 733V VGS = 15V ID = 22A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5643 828 153 180 32 111 18 9 45 14 961 581 1812 899
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
22 88 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -22A)
5
dv/
t rr
Reverse Recovery Time (IS = -22A, di/dt = 100A/s) Reverse Recovery Charge (IS = -22A, di/dt = 100A/s) Peak Recovery Current (IS = -22A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
320 650 3.60 9.72 16.5 24.7
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 12.40mH, RG = 25, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -22A di/dt 700A/s VR 1100 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 10-3 10-2 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
11-2003
050-7179 Rev A
Z
JC
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
50
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT11044JFLL
45 40 35 30 25 20 15 10 5 0 5.5V 5V 6V VGS =15 & 10V 6.5V 7V
0.0529
0.02037F
Power (watts)
0.0651
0.173F
0.123 Case temperature. (C)
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 70
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 11A
GS
60 50 40 30
1.30 VGS=10V 1.20
TJ = -55C
1.10
TJ = +25C 20 10 0 TJ = +125C
1.00
VGS=20V
0.90 0.80
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
20
1.10
15
1.05
10
1.00
5
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50
11-2003 050-7179 Rev A
3
= 11A = 10V
2.0 1.5 1.0 0.5
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
GS
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT11044JFLL
88
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 Ciss 100S
C, CAPACITANCE (pF)
50
10 5 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
1,000 Coss
10mS
= 22A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 100
12
VDS= 220V
TJ =+150C TJ =+25C 10
8
VDS= 550V
VDS= 880V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 250
td(on) and td(off) (ns)
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90
1
td(off)
80 70
V
DD G
= 733V
200
V
DD G
= 733V
60
tr and tf (ns)
R
= 5
tf
R
= 5
T = 125C
150 100 50
T = 125C
J
50 40 30 20
J
L = 100H
L = 100H
tr
td(on) 0 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 6000
V I
DD
5
10
0
5
10
3000 2500
SWITCHING ENERGY (J)
= 733V
= 733V
R
= 5
D J
= 22A
T = 125C
J
5000
SWITCHING ENERGY (J)
T = 125C L = 100H EON includes diode reverse recovery.
L = 100H
Eoff
2000 1500
E ON includes diode reverse recovery.
4000 3000
Eon 1000 500 0 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 Eoff
11-2003
2000 1000 0
Eon
050-7179 Rev A
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT11044JFLL
10 %
Gate Voltage T = 125 C J
90% td(off) 90%
Gate Voltage
T = 125 C J
td(on)
Drain Voltage
tr 90%
Drain Current
t f 10% 0
Switching Energy Drain Current
5% Switching Energy
10 %
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7179 Rev A
11-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

▲Up To Search▲

Price & Availability of APT11044JFLL

	To Download APT11044JFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .